• DocumentCode
    447907
  • Title

    InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 /spl mu/m

  • Author

    Revin, D.G. ; Wilson, L.R. ; Zibik, E.A. ; Green, R.P. ; Cockburn, J.W. ; Steer, M.J. ; Airey, R.J. ; Hopkinson, M. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Sheffield
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    248
  • Lastpage
    250
  • Abstract
    We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; substrates; 4.4 micron; InGaAs-AlAsSb; InP substrates; epitaxial layers; quantum cascade lasers; Conducting materials; Indium phosphide; Laser stability; Optical materials; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Substrates; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201741
  • Filename
    1572807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447907