DocumentCode :
447907
Title :
InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 /spl mu/m
Author :
Revin, D.G. ; Wilson, L.R. ; Zibik, E.A. ; Green, R.P. ; Cockburn, J.W. ; Steer, M.J. ; Airey, R.J. ; Hopkinson, M. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield
Volume :
1
fYear :
2005
fDate :
27-27 May 2005
Firstpage :
248
Lastpage :
250
Abstract :
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; substrates; 4.4 micron; InGaAs-AlAsSb; InP substrates; epitaxial layers; quantum cascade lasers; Conducting materials; Indium phosphide; Laser stability; Optical materials; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Substrates; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201741
Filename :
1572807
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447907
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