Title :
Room temperature intersubband electroluminescence near 3 /spl mu/m from InAs/AlSb quantum cascade structures
Author :
Teissier, R. ; Barate, D. ; Alibert, C. ; Baranov, A.N.
Author_Institution :
Lab. d´´Electronique et de Micro-optoelectronique de Montpellier, CNRS, Montpellier
Abstract :
Intersubband electroluminescence from InAs/AlSb quantum cascade structures has been obtained between 2.8 and 3.2 mum up to room temperature with full widths at half maximum of the emission spectra less than 30 meV at 90 K
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; indium compounds; 2.8 to 3.2 micron; 293 to 298 K; 90 K; InAs-AlSb; InAs/AlSb quantum cascade structures; emission spectra; intersubband electroluminescence; Capacitive sensors; Conducting materials; Electroluminescence; Gas lasers; Infrared spectra; Optical sensors; Quantum cascade lasers; Semiconductor lasers; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201742
