• DocumentCode
    447908
  • Title

    Room temperature intersubband electroluminescence near 3 /spl mu/m from InAs/AlSb quantum cascade structures

  • Author

    Teissier, R. ; Barate, D. ; Alibert, C. ; Baranov, A.N.

  • Author_Institution
    Lab. d´´Electronique et de Micro-optoelectronique de Montpellier, CNRS, Montpellier
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    251
  • Lastpage
    253
  • Abstract
    Intersubband electroluminescence from InAs/AlSb quantum cascade structures has been obtained between 2.8 and 3.2 mum up to room temperature with full widths at half maximum of the emission spectra less than 30 meV at 90 K
  • Keywords
    III-V semiconductors; aluminium compounds; electroluminescence; indium compounds; 2.8 to 3.2 micron; 293 to 298 K; 90 K; InAs-AlSb; InAs/AlSb quantum cascade structures; emission spectra; intersubband electroluminescence; Capacitive sensors; Conducting materials; Electroluminescence; Gas lasers; Infrared spectra; Optical sensors; Quantum cascade lasers; Semiconductor lasers; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201742
  • Filename
    1572808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447908