DocumentCode :
447910
Title :
Surface emission from MBE and MOVPE grown quantum cascade lasers
Author :
Schrenk, W. ; Pflügl, C. ; Austerer, M. ; Golka, S. ; Strasser, G. ; Green, R.P. ; Wilson, L.R. ; Revin, D.G. ; Zibik, E.A. ; Cockburn, J.W. ; Tey, C.M. ; Krysa, A.B. ; Roberts, J.S. ; Cullis, A.G.
Author_Institution :
Zentrum fur Mikro- und Nanostrukturen, Technische Univ. Wien, Vienna
Volume :
1
fYear :
2005
fDate :
27-27 May 2005
Firstpage :
257
Lastpage :
259
Abstract :
We report high power single mode surface emission from second order distributed feedback quantum cascade lasers. Two different laser materials are used for the lasers: MOVPE grown InGaAs/InAlAs and MBE grown GaAs/AlGaAs
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs-InAlAs; InGaAs/InAlAs; MBE; MOVPE grown; distributed feedback lasers; laser materials; quantum cascade lasers; surface emission; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium compounds; Indium gallium arsenide; Laser feedback; Laser modes; Optical materials; Quantum cascade lasers; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201744
Filename :
1572810
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447910
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