• DocumentCode
    447910
  • Title

    Surface emission from MBE and MOVPE grown quantum cascade lasers

  • Author

    Schrenk, W. ; Pflügl, C. ; Austerer, M. ; Golka, S. ; Strasser, G. ; Green, R.P. ; Wilson, L.R. ; Revin, D.G. ; Zibik, E.A. ; Cockburn, J.W. ; Tey, C.M. ; Krysa, A.B. ; Roberts, J.S. ; Cullis, A.G.

  • Author_Institution
    Zentrum fur Mikro- und Nanostrukturen, Technische Univ. Wien, Vienna
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    257
  • Lastpage
    259
  • Abstract
    We report high power single mode surface emission from second order distributed feedback quantum cascade lasers. Two different laser materials are used for the lasers: MOVPE grown InGaAs/InAlAs and MBE grown GaAs/AlGaAs
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs-InAlAs; InGaAs/InAlAs; MBE; MOVPE grown; distributed feedback lasers; laser materials; quantum cascade lasers; surface emission; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium compounds; Indium gallium arsenide; Laser feedback; Laser modes; Optical materials; Quantum cascade lasers; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201744
  • Filename
    1572810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447910