Title :
Site selective spectroscopy of Eu-doped GaN
Author :
Dierolf, Volkmar ; Fleischman, Zackery ; Sandmann, Christian ; Munasinghe, Chanaka ; Steckl, A.
Author_Institution :
Dept. of Phys., Lehigh Univ., Bethlehem, PA
Abstract :
Site-selective combined excitation emission spectroscopy studies have been performed on Eu-doped GaN and numerous sites have been identified. Relative numbers and broadening of these peaks has been investigated for different growth conditions
Keywords :
III-V semiconductors; europium; gallium compounds; photoluminescence; wide band gap semiconductors; GaN:Eu; growth conditions; site-selective combined excitation emission spectroscopy; Gallium nitride; Laser excitation; Molecular beam epitaxial growth; Optical materials; Optical pumping; Particle beam optics; Semiconductor lasers; Semiconductor optical amplifiers; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201760
