DocumentCode :
447953
Title :
Domain inversion and optical damage in Zn doped near-stoichiometric lithium niobate crystal
Author :
Kumaragurubaran, S. ; Takekawa, S. ; Nakamura, M. ; Ganesamoorthy, S. ; Terabe, K. ; Kitamura, K.
Author_Institution :
Opto-Single Crystal Group, Nat. Inst. for Mater. Sci., Tsukuba
Volume :
1
fYear :
2005
fDate :
27-27 May 2005
Firstpage :
393
Lastpage :
395
Abstract :
The electric field to invert the domain in doped near-stoichiometric LiNbO3 varies with Zn concentration. Inversion is accomplished with low field of 1.4kV/mm at 2mol% doping where the optical damage resistance of the crystal enhances
Keywords :
lithium compounds; optical materials; optical parametric oscillators; optical phase matching; zinc; LiNbO3:Zn; OPO; QPM; Zn doped near-stoichiometric lithium niobate crystal; domain inversion; optical damage resistance; Crystals; Doping; Electric resistance; Electrodes; Lithium niobate; Nonlinear optical devices; Nonlinear optics; Optical devices; Polarization; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201790
Filename :
1572856
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447953
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