• DocumentCode
    447953
  • Title

    Domain inversion and optical damage in Zn doped near-stoichiometric lithium niobate crystal

  • Author

    Kumaragurubaran, S. ; Takekawa, S. ; Nakamura, M. ; Ganesamoorthy, S. ; Terabe, K. ; Kitamura, K.

  • Author_Institution
    Opto-Single Crystal Group, Nat. Inst. for Mater. Sci., Tsukuba
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    393
  • Lastpage
    395
  • Abstract
    The electric field to invert the domain in doped near-stoichiometric LiNbO3 varies with Zn concentration. Inversion is accomplished with low field of 1.4kV/mm at 2mol% doping where the optical damage resistance of the crystal enhances
  • Keywords
    lithium compounds; optical materials; optical parametric oscillators; optical phase matching; zinc; LiNbO3:Zn; OPO; QPM; Zn doped near-stoichiometric lithium niobate crystal; domain inversion; optical damage resistance; Crystals; Doping; Electric resistance; Electrodes; Lithium niobate; Nonlinear optical devices; Nonlinear optics; Optical devices; Polarization; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201790
  • Filename
    1572856