Title :
Very low threshold, carrier- and index-confined semiconductor lasers by one single selective-area-growth
Author :
Cai, Jianxin ; Gu, Yonglin ; Ji, Xiaoming ; Yan, Jingzhou ; Ru, Guoyun ; Cheng, Liwel ; Choa, Fow-Sen ; Fan, Jenyu
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
We demonstrated very low threshold carrier- and index-confined semiconductor lasers made of a single selective-area-growth without regrowths. The threshold current is as low as 2.7 mA with excellent uniformity and reproducibility.
Keywords :
MOCVD; optical fabrication; semiconductor lasers; 2.7 mA; carrier-confined semiconductor lasers; index-confined semiconductor lasers; single selective-area-growth; threshold current; Distributed feedback devices; Etching; Indium gallium arsenide; Indium phosphide; Laser theory; MOCVD; Quantum well devices; Semiconductor lasers; Temperature; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201847
