DocumentCode
448007
Title
InGaAsP/InP dual wavelength bipolar cascade lasers with 100 nm wavelength spacing
Author
Yan, J. ; Cai, J. ; Ru, G. ; Yu, X. ; Choa, F.S. ; Fan, J.
Author_Institution
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
571
Abstract
Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; semiconductor lasers; 1350 nm; 1450 nm; InGaAsP-InP; InGaAsP-InP bipolar cascade laser; active regions; dual wavelength bipolar cascade laser; low resistance hetero-tunnel-junction; ultra-broadband gain materials; wavelength spacing; Indium phosphide; Laser modes; Optical interferometry; Optical waveguides; Quantum cascade lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201850
Filename
1572916
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