DocumentCode
448010
Title
Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer
Author
Wu, Y.-S. ; Shi, J.-W. ; Wu, J.-Y. ; Huang, F.-H. ; Chan, Y.-J. ; Huang, Y.-L. ; Xuan, R.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
579
Abstract
An evanescently-coupled-photodiode with partially p-doped photo-absorption layer was demonstrated and designed by a bandwidth simulation model to optimize its speed performance. Excellent performance of speed, saturation-power, and responsivity can be achieved simultaneously at 1.55 μm wavelength.
Keywords
high-speed optical techniques; integrated optoelectronics; optical design techniques; optical waveguide components; photoconductivity; photodiodes; photoemission; 1.55 micron; bandwidth simulation model; high-speed evanescently coupled photodiodes design; partially p-doped photo-absorption layer; waveguide photodiode; Bandwidth; Circuit simulation; Electron mobility; High speed optical techniques; Optical saturation; Optical surface waves; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201853
Filename
1572919
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