DocumentCode
448013
Title
Photoionization of trapped carriers in avalanche photodiodes to reduce afterpulsing during Geiger-mode photon counting
Author
Krainak, Michael A.
Author_Institution
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
588
Abstract
We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (λ=1.95 μm) laser diode illumination, which we believe photoionizes the trapped carriers.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photoionisation; photon counting; semiconductor lasers; 1.95 micron; Geiger-mode photon counting; InGaAs; afterpulsing probability; avalanche photodiodes; photoionization; sub-band-gap laser diode illumination; trapped carriers; Avalanche photodiodes; Charge carrier processes; Detectors; Indium gallium arsenide; Ionization; Lighting; Optical filters; Photonic band gap; Photonics Society; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201856
Filename
1572922
Link To Document