Title :
Optical amplification in silicon quantum dot superlattices
Author :
Ruan, Jinhao ; Chen, Hui ; Fauchet, Philippe M.
Author_Institution :
Dept. of Phys. & Astron., Rochester Univ., NY, USA
Abstract :
We report results on optical gain in superlattices containing nm-thick Si quantum dot layers. Using VSL method a fast (nsec) ASE component appears above a threshold under intense pulsed pumping. Gain up to 100 cm-1 is measured.
Keywords :
elemental semiconductors; optical pumping; semiconductor quantum dots; semiconductor superlattices; silicon; superradiance; ASE component; Si; VSL method; intense pulsed pumping; optical amplification; optical gain; quantum dot layers; silicon quantum dot superlattices; Optical buffering; Optical interconnections; Optical pumping; Optical superlattices; Pulse amplifiers; Quantum dots; Semiconductor optical amplifiers; Silicon; Stimulated emission; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201864
