DocumentCode :
448033
Title :
Second-harmonic characterization of Si/Hf(1-x)SixO2 interfaces
Author :
Carriles, R. ; Kwon, J. ; An, Y.Q. ; Miller, J.C. ; Downer, M.C. ; Price, J. ; Diebold, A.C.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
657
Abstract :
We present a second-harmonic generation study of a set of device quality Si/Hf(1-x)SixO2 interfaces for different x values and annealing treatments. Rotationally-anisotropic, spectroscopic and time-dependent SHG depend strongly on dielectric composition and annealing.
Keywords :
hafnium compounds; optical harmonic generation; silicon compounds; Si-Hf(1-x)SixO2; annealing treatment; dielectric composition; rotationally-anisotropic SHG; second-harmonic generation; time-dependent SHG; Anisotropic magnetoresistance; Annealing; Azimuthal angle; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Nonlinear optical devices; Nonlinear optics; Optical films; Optical harmonic generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201879
Filename :
1572945
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=448033
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