Title :
Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials
Author :
Thränhardt, A. ; Schlichenmaier, C. ; Becker, S. ; Hantke, K. ; Heber, J.D. ; Rühle, W.W. ; Koch, S.W. ; Hader, J. ; Moloney, J.V. ; Chow, W.W.
Author_Institution :
Dept. of Phys. & Mater. Sci., Philipps-Univ., Marburg, Germany
Abstract :
The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; photoluminescence; quantum well lasers; semiconductor device models; GaInNAs; GaInNAs structure; carrier scattering; dilute nitride semiconductor laser material; microscopic theory; nonequilibrium gain model; photoluminescence; Charge carrier density; Laser modes; Optical materials; Optical microscopy; Optical pumping; Optical scattering; Photoluminescence; Plasma temperature; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201896
