Title :
Sub-picosecond all-optical switch with extinction ratio of 10 dB utilizing GaN intersubband transition
Author :
Iizuka, Norio ; Kaneko, Kei ; Suzuki, Nobuo
Author_Institution :
R&D Center, Toshiba Corp., Tokyo, Japan
Abstract :
An all-optical gate switch utilizing intersubband transition in GaN/AlN quantum wells was fabricated by MBE re-growth on an MOCVD-grown GaN. The extinction ratio of 10 dB was achieved with the gate width of 240 fs.
Keywords :
III-V semiconductors; MOCVD; extinction coefficients; gallium compounds; high-speed optical techniques; molecular beam epitaxial growth; optical fabrication; optical logic; optical switches; semiconductor quantum wells; wide band gap semiconductors; 240 fs; GaN-AlN; MBE regrowth; MOCVD; all-optical gate switch fabrication; extinction ratio; intersubband transition; quantum well; sub-picosecond all-optical switch; Absorption; Extinction ratio; Gallium nitride; Molecular beam epitaxial growth; Optical pulses; Optical waveguides; Page description languages; Polarization; Pulse modulation; Switches;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201904
