DocumentCode
44824
Title
SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles
Author
Hamada, Kazuya ; Nagao, Masaru ; Ajioka, Masaki ; Kawai, Fumiaki
Author_Institution
Toyota Motor Corp., Toyota, Japan
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
278
Lastpage
285
Abstract
The automotive industry is developing a range of electrically powered environmentally friendly vehicles such as hybrid vehicles (HVs), plug-in hybrid vehicles, full electric vehicles, and fuel cell vehicles to help reduce tailpipe CO2 emissions and achieve energy diversification. HVs are regarded as one of the most practical types of environmentally friendly vehicle and have already been widely accepted in the market. Toyota Motor Corporation has positioned HV systems as a core technology that can be applied to all next-generation electrically powered environmentally friendly vehicles and is currently working to enhance the performance of HV system components. Because of its low loss and high-temperature operation properties, silicon carbide (SiC) is regarded as a highly promising material for power semiconductor devices to help reduce the size and weight of the power control unit, one of the key components of a HV system. Wide-ranging activities are under way to meet the challenges of adopting SiC in an automotive environment, such as the development of crystal growth technologies, device structures, process technologies, defect analysis, and application to on-board systems. This paper describes the current situation and future prospects for on-board SiC power devices and the development of SiC-based technologies.
Keywords
hybrid electric vehicles; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; SiC-based technologies; Toyota Motor Corporation; automotive industry; crystal growth technologies; defect analysis; device structures; energy diversification; fuel cell vehicles; full electric vehicles; next-generation electrically powered environmentally friendly vehicles; on-board SiC power devices; on-board systems; plug-in hybrid vehicles; power control unit; power semiconductor devices; process technologies; silicon carbide; Crystals; Epitaxial growth; Leakage currents; MOSFET; Schottky diodes; Silicon carbide; Vehicles; Electric vehicles (EVs); MOSFETs; hybrid vehicles (HVs); junction barrier Schottky (JBS) diode; power electronics circuit; power semiconductor devices; semiconductor growth; silicon carbide (SiC); silicon carbide (SiC).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2359240
Filename
6960032
Link To Document