DocumentCode
44884
Title
Design and Synthesis of Ultralow Energy Spin-Memristor Threshold Logic
Author
Deliang Fan ; Sharad, Mrigank ; Roy, Kaushik
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
13
Issue
3
fYear
2014
fDate
May-14
Firstpage
574
Lastpage
583
Abstract
A threshold logic gate performs weighted sum of multiple inputs and compares the sum with a threshold. We propose spin-memristor threshold logic (SMTL) gates, which employ a memristive cross-bar array to perform current-mode summation of binary inputs, whereas the low-voltage fast-switching spintronic threshold devices carry out the threshold operation in an energy efficient manner. Field-programmable SMTL gate arrays can operate at a small terminal voltage of ~50 mV, resulting in ultralow power consumption in gates as well as programmable interconnect networks. We evaluate the performance of SMTL using threshold logic synthesis. Results for common benchmarks show that SMTL-based programmable logic hardware can be more than 100 × energy efficient than the state-of-the-art CMOS field-programmable gate array.
Keywords
CMOS logic circuits; logic design; logic gates; memristors; programmable logic devices; CMOS field programmable gate array; current mode summation; field programmable SMTL gate arrays; low voltage fast switching spintronic threshold devices; memristive crossbar array; programmable interconnect networks; programmable logic hardware; threshold logic gate; ultralow energy spin memristor threshold logic; ultralow power consumption; Arrays; CMOS integrated circuits; Logic gates; Magnetic domain walls; Memristors; Programming; Resistance; Boolean functions; magnetic domains; memristor; nanotechnology; programmable logic arrays; threshold logic (TL);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2312177
Filename
6776526
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