• DocumentCode
    449043
  • Title

    A 1310-nm InGaAlAs short-cavity DBR laser for 100°C, 10-Gbit/s operations with a 14-mApp current drive

  • Author

    Aoki, Masahiro ; Shinoda, Kazunori ; Kitatani, Takeshi ; Tsuchiya, Tomonobu ; Mukaikubo, Masaru ; Uchida, Kenji ; Uomi, Kazuhisa

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    2
  • fYear
    2005
  • fDate
    25-29 Sept. 2005
  • Firstpage
    293
  • Abstract
    We propose and demonstrate a new 1310-nm DBR-based InGaAIAs short-cavity edge-emitter suitable for cost-effective 10-Gbit/s smaller-form-factor modules. We achieved 100°C, 10-Gbit/s direct-modulations at a record 14-mApp current-drive with an averaged chip-power of -3 dBm.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; optical modulation; quantum well lasers; 10 Gbit/s; 100 degC; 1310 nm; 14 mA; InGaAlAs; InGaAlAs short-cavity DBR laser; direct modulations; smaller-form-factor modules;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 2005. ECOC 2005. 31st European Conference on
  • Conference_Location
    IET
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-543-1
  • Type

    conf

  • Filename
    1576235