Title :
A 1310-nm InGaAlAs short-cavity DBR laser for 100°C, 10-Gbit/s operations with a 14-mApp current drive
Author :
Aoki, Masahiro ; Shinoda, Kazunori ; Kitatani, Takeshi ; Tsuchiya, Tomonobu ; Mukaikubo, Masaru ; Uchida, Kenji ; Uomi, Kazuhisa
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We propose and demonstrate a new 1310-nm DBR-based InGaAIAs short-cavity edge-emitter suitable for cost-effective 10-Gbit/s smaller-form-factor modules. We achieved 100°C, 10-Gbit/s direct-modulations at a record 14-mApp current-drive with an averaged chip-power of -3 dBm.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; optical modulation; quantum well lasers; 10 Gbit/s; 100 degC; 1310 nm; 14 mA; InGaAlAs; InGaAlAs short-cavity DBR laser; direct modulations; smaller-form-factor modules;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
