DocumentCode
449044
Title
Ru-doped semi-insulating buried heterostructure laser operating up to 100°C for 10-Gbit/s direct modulation
Author
Iga, R. ; Kondo, Y. ; Takeshita, T. ; Kishi, K. ; Yuda, M.
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume
2
fYear
2005
fDate
25-29 Sept. 2005
Firstpage
295
Abstract
We report the high-temperature characteristics of 1.3-μm InGaAsP directly modulated lasers with a simple buried structure using Ru-doped semi-insulating InP. Clear eye openings under 10-Gbit/s direct modulations were obtained from 0°C to 100°C.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; ruthenium; semiconductor doping; semiconductor lasers; 0 to 100 degC; 10 Gbit/s; InGaAsP; InGaAsP directly modulated lasers; InP:Ru; Ru-doped semi-insulating buried heterostructure laser; direct modulation;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location
IET
ISSN
0537-9989
Print_ISBN
0-86341-543-1
Type
conf
Filename
1576236
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