A Simulation Study of Hot Carrier Effects in SoI-Like Bulk Silicon nMOS Device

Author

Ying Wang ; Xiao-Wen He ; Chan Shan

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

62

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

23

Lastpage

27

Abstract

A silicon-on-insulator (SoI)-like bulk silicon (SLBS) MOSFET structure is studied and compared against a fully depleted (FD) SoI MOSFET using 2-D numerical simulations. A p/n^-/p⁺ structure was contained in SLBS device, in which n^- is made of 4H-SiC. This n^- layer is FD. Hot carrier (HC) effects (HCEs) in proposed SLBS nMOSFET were simulated and compared with that in FD SoI nMOSFET. In this paper, HC-induced device degradation is characterized under different temperatures. HCE of SLBS always has an advantage over that of SoI. The worst case bias condition for HCEs has also been studied and was found as V_gs = 1/2V_ds.

Keywords

MOSFET; hot carriers; 2D numerical simulations; SOI-like bulk silicon nMOS device; device degradation; hot carrier effect; silicon-on-insulator bulk silicon MOSFET; Degradation; Logic gates; MOSFET; Silicon; Silicon carbide; Stress; Bulk silicon; SoI-like; SoI-like.; fully depleted (FD) silicon- on-insulator (SoI) nMOS; fully depleted (FD) silicon-on-insulator (SoI) nMOS; hot carrier effects (HCEs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2368120

Filename

6960041