Title :
Low energy ultrafast switching in silicon wire waveguides
Author :
Nunes, L.R. ; Liang, T.K. ; Abedin, K.S. ; Van Thourhout, Dries ; Dumon, P. ; Baets, R. ; Tsang, H.K. ; Miyazaki, T. ; Tsuchiya, M.
Author_Institution :
Dept. of Basic & Adv. Res., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Abstract :
1.9 ps optical switching at 40 GHz repetition rate has been successfully demonstrated in submicron-size silicon wire waveguides. Ultrafast operation is achieved by induced optical absorption from two-photon absorption (TPA) process. The device requires very low energy, less than 3 pJ, to accomplish 92% of modulation depth.
Keywords :
high-speed optical techniques; micro-optics; optical fibre communication; optical switches; optical waveguides; silicon-on-insulator; two-photon processes; 1.9 ps; 40 GHz; Si; induced optical absorption; low energy switching; optical switching; silicon wire waveguides; submicron-size waveguides; two-photon absorption; ultrafast switching;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
