DocumentCode :
450200
Title :
An optically pumped silicon evanescent laser
Author :
Fang, A.W. ; Park, Hyundai ; Kodama, Satoshi ; Bowers, John E.
Author_Institution :
ECE Dept., California State Univ., Santa Barbara, CA, USA
Volume :
6
fYear :
2005
fDate :
25-29 Sept. 2005
Firstpage :
57
Abstract :
A laser utilizing wafer scale heterogeneous integration of silicon waveguides with offset AlGaInAs quantum wells is demonstrated. This laser has a threshold of 30 mW and a maximum power of 1.4 mW and has the ability to integrate photonic devices with Si VLSI CMOS technology.
Keywords :
III-V semiconductors; VLSI; aluminium compounds; elemental semiconductors; gallium arsenide; gallium compounds; integrated optics; optical pumping; quantum well lasers; silicon; 1.4 mW; 30 mW; AlGaInAs; AlGaInAs quantum wells; Si; Si VLSI CMOS; optically pumped silicon evanescent laser; wafer scale heterogeneous integration;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
ISSN :
0537-9989
Print_ISBN :
0-86341-543-1
Type :
conf
Filename :
1584176
Link To Document :
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