DocumentCode
450272
Title
Novel ultrafast monolithic optical gate integrating uni-traveling-carrier photodiode and InP-based Mach-Zehnder modulator
Author
Yoshimatsu, T. ; Kodama, S. ; Ito, H.
Author_Institution
NTT Photonics Lab., NTT Corp., Kanagawa, Japan
Volume
4
fYear
2005
fDate
25-29 Sept. 2005
Firstpage
899
Abstract
A novel ultrafast optical gate monolithically integrating a uni-traveling-carrier photodiode and an InP-based traveling-wave Mach-Zehnder modulator has been realized. A gate opening time of 5 ps and an on/off ratio of 12 dB have been achieved.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; integrated optics; optical receivers; photodiodes; 5 ps; InP; InP-based traveling-wave Mach-Zehnder modulator; electroabsorption modulator; monolithic integration; on-off ratio; ultrafast optical gate; uni-traveling-carrier photodiode;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location
IET
ISSN
0537-9989
Print_ISBN
0-86341-543-1
Type
conf
Filename
1584249
Link To Document