Title :
kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
Author :
Wu, Y.-F. ; Gritters, J. ; Shen, L. ; Smith, R.P. ; Swenson, Brian
Author_Institution :
Transphorm Inc., Goleta, CA, USA
Abstract :
kV-class GaN high electron mobility transistors built on low-cost Si substrate have been developed with proven switching performance. These devices show a blocking voltage >1200 V, low on-resistance <;0.19 Ω, and high switching speed >200 V/ns. A 3-kW 400 V:800 V hard-switched boost converter based on the GaN transistor achieves 99% efficiency at 100 kHz, well exceeding that of other competing semiconductors.
Keywords :
high electron mobility transistors; power convertors; transistors; GaN; HEMT; Si; blocking voltage; efficiency converter; electron mobility transistors; frequency 100 kHz; hard-switched boost converter; power 3 kW; resistance 0.19 ohm; semiconductors; switching performance; switching speed; transistor; voltage 1200 V; voltage 400 V; voltage 800 V; Gallium nitride; HEMTs; Logic gates; Loss measurement; MODFETs; MOSFET; Silicon; Efficiency; GaN; high frequency; high voltage; power device; semiconductor; wide band gap;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2284248
