HVIGBT Physical Model Analysis During Transient

Author

Ji, Shiqi ; Zhao, Zhengming ; Lu, Ting ; Yuan, Liqiang ; Yu, Hualong

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

Volume

28

Issue

5

fYear

2013

fDate

May-13

Firstpage

2616

Lastpage

2624

Abstract

The insulated gate bipolar transistor (IGBT) physical models are studied in details. The difference between low-voltage IGBT (LVIGBT) and high-voltage IGBT (HVIGBT) is analyzed and the shortage of the LVIGBT model used for HVIGBT is discussed. The physical model considering the effect of carrier concentrate on excess carrier lifetime is established for HVIGBT. The HVIGBT transient model is presented with different excess carrier lifetime in the base. The new description of steady-state U-I characteristics is also obtained with numerical method. The test experiment was performed in a Buck converter using 6500 V HVIGBT with different bus voltage and load current. The accuracy of the transient model of HVIGBT is verified by experiment and simulation results. The verification of some key parameters to describe the external characteristics is also given in the paper.

Keywords

insulated gate bipolar transistors; numerical analysis; power bipolar transistors; power convertors; HVIGBT physical model analysis; HVIGBT transient model; LVIGBT; buck converter; carrier lifetime; high-voltage insulated gate bipolar transistor physical models analysis; low-voltage insulated gate bipolar transistor; numerical method; steady-state U-I characteristics; voltage 6500 V; Charge carrier processes; Equations; Insulated gate bipolar transistors; Mathematical model; Semiconductor device modeling; Steady-state; Transient analysis; Carrier lifetime; high-voltage IGBT (HVIGBT); model; transient;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2012.2218620

Filename

6307884