مرکز منطقه ای اطلاع رساني علوم و فناوري - 2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications

DocumentCode :

451408

Title :

2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications

Author :

Veliadis, Victor ; Chen, Li-Shu ; Stewart, Eric ; McCoy, Megan ; McNutt, Ty ; Van Campen, Steve ; Clarke, Chris ; DeSalvo, Gregory

fYear :

2005

fDate :

Dec. 7-9, 2005

Firstpage :

166

Lastpage :

167

Keywords :

Dielectrics; Electrons; Epitaxial layers; Forward contracts; Implants; Packaging; Silicides; Silicon carbide; Testing; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Device Research Symposium, 2005 International

Print_ISBN :

1-4244-0083-X

Type :

conf

DOI :

10.1109/ISDRS.2005.1596034

Filename :

1596034

Link To Document :