DocumentCode
451487
Title
Ultrasonic defect manipulation in irradiated silicon
Author
Cremaldi, L.
Volume
1
fYear
2005
fDate
23-29 Oct. 2005
Firstpage
482
Lastpage
485
Abstract
It is shown that room temperature ultrasonic defect manipulation (UDM) can significantly reduce the concentration of radiation defects in high resistivity silicon. Secondary ion mass spectroscopy reveals that oxygen- and hydrogen-related chemical reactions are activated in silicon by UDM at room temperature. This ultrasonically stimulated activation supports changes in bulk conductivity of the sample and a migration of impurities to the surface.
Keywords
chemical reactions; electrical conductivity; elemental semiconductors; point defects; secondary ion mass spectra; ultrasonic effects; bulk conductivity; hydrogen-related chemical reaction; oxygen-related chemical reaction; radiation defects; room temperature; secondary ion mass spectroscopy; ultrasonic defect manipulation; Acoustic waves; Annealing; Conductivity; Crystallization; Mass spectroscopy; Radiation detectors; Silicon; Solids; Temperature; Ultrasonic imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2005 IEEE
ISSN
1095-7863
Print_ISBN
0-7803-9221-3
Type
conf
DOI
10.1109/NSSMIC.2005.1596298
Filename
1596298
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