Title :
Comparison of X-ray GaAs and CdTe p-i-n detectors by a 3D FEM model
Author :
Rizzi, M. ; Maurantonio, M. ; Castagnolo, B.
Author_Institution :
Dept. of Electron., Univ. Politecnico di Bari
Abstract :
In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (241Am with 60 KeV) exhibit the same efficiency at 243 K while, at room temperature (300 K) their behaviour is far better
Keywords :
III-V semiconductors; X-ray apparatus; finite element analysis; gallium arsenide; position sensitive particle detectors; semiconductor counters; 3D finite element analysis model; 241Am energy source; CdTe; GaAs; X-ray CdTe p-i-n detector; X-ray GaAs p-i-n detector; digital X-ray image systems; Electron traps; Energy resolution; Gallium arsenide; Image sensors; PIN photodiodes; Semiconductor materials; Space charge; Temperature; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Conference_Location :
Fajardo
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596363
