Comparison of X-ray GaAs and CdTe p-i-n detectors by a 3D FEM model

Author

Rizzi, M. ; Maurantonio, M. ; Castagnolo, B.

Author_Institution

Dept. of Electron., Univ. Politecnico di Bari

Volume

2

fYear

2005

fDate

23-29 Oct. 2005

Firstpage

740

Lastpage

745

Abstract

In this paper a 3D FEM model is used to simulate the temperature behaviour of X-ray GaAs and CdTe p-i-n detectors. The good accordance of the obtained values with the know experimental data confirms the general validity of the adopted model in simulating devices of any material, at any working temperature. Moreover the comparison shows that GaAs detectors having the same dimension than CdTe detectors and for the same energy source (²⁴¹Am with 60 KeV) exhibit the same efficiency at 243 K while, at room temperature (300 K) their behaviour is far better

Keywords

III-V semiconductors; X-ray apparatus; finite element analysis; gallium arsenide; position sensitive particle detectors; semiconductor counters; 3D finite element analysis model; ²⁴¹Am energy source; CdTe; GaAs; X-ray CdTe p-i-n detector; X-ray GaAs p-i-n detector; digital X-ray image systems; Electron traps; Energy resolution; Gallium arsenide; Image sensors; PIN photodiodes; Semiconductor materials; Space charge; Temperature; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2005 IEEE

Conference_Location

Fajardo

ISSN

1095-7863

Print_ISBN

0-7803-9221-3

Type

conf

DOI

10.1109/NSSMIC.2005.1596363

Filename

1596363