DocumentCode
451634
Title
Performance of CdZnTe detectors grown by low-pressure Bridgman
Author
Seifert, Carolyn E. ; Orrell, John L. ; Coomes, Donald E. ; LaMarche, Brian L. ; Bliss, Mary ; Lynn, Kelvin G. ; Jones, Kelly A. ; Campi, Guido
Author_Institution
Pacific Northwest Lab., Richland, WA, USA
Volume
3
fYear
2005
fDate
23-29 Oct. 2005
Firstpage
1383
Lastpage
1385
Abstract
Recent advances in the growth and doping of CdZnTe using low-pressure Bridgman methods have allowed for the production of high-resistivity crystals. In this work, we present electrical characterization measurements on samples of CdZnTe grown at Washington State University. We demonstrate the capabilities of the CdZnTe material to perform as radiation detectors and correlate detector performance with crystal growth conditions.
Keywords
II-VI semiconductors; cadmium compounds; crystal growth from melt; semiconductor counters; wide band gap semiconductors; zinc compounds; CdZnTe; CdZnTe detectors; crystal growth; electrical characterization; high-resistivity crystals; low-pressure Bridgman methods; Crystalline materials; Doping; Electrodes; Energy resolution; Geometry; Preamplifiers; Pulse shaping methods; Radiation detectors; Spectroscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2005 IEEE
ISSN
1095-7863
Print_ISBN
0-7803-9221-3
Type
conf
DOI
10.1109/NSSMIC.2005.1596577
Filename
1596577
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