DocumentCode :
451634
Title :
Performance of CdZnTe detectors grown by low-pressure Bridgman
Author :
Seifert, Carolyn E. ; Orrell, John L. ; Coomes, Donald E. ; LaMarche, Brian L. ; Bliss, Mary ; Lynn, Kelvin G. ; Jones, Kelly A. ; Campi, Guido
Author_Institution :
Pacific Northwest Lab., Richland, WA, USA
Volume :
3
fYear :
2005
fDate :
23-29 Oct. 2005
Firstpage :
1383
Lastpage :
1385
Abstract :
Recent advances in the growth and doping of CdZnTe using low-pressure Bridgman methods have allowed for the production of high-resistivity crystals. In this work, we present electrical characterization measurements on samples of CdZnTe grown at Washington State University. We demonstrate the capabilities of the CdZnTe material to perform as radiation detectors and correlate detector performance with crystal growth conditions.
Keywords :
II-VI semiconductors; cadmium compounds; crystal growth from melt; semiconductor counters; wide band gap semiconductors; zinc compounds; CdZnTe; CdZnTe detectors; crystal growth; electrical characterization; high-resistivity crystals; low-pressure Bridgman methods; Crystalline materials; Doping; Electrodes; Energy resolution; Geometry; Preamplifiers; Pulse shaping methods; Radiation detectors; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
ISSN :
1095-7863
Print_ISBN :
0-7803-9221-3
Type :
conf
DOI :
10.1109/NSSMIC.2005.1596577
Filename :
1596577
Link To Document :
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