• DocumentCode
    45179
  • Title

    Near-Infrared Organic Photodiodes

  • Author

    Arca, Francesco ; Sramek, Maria ; Tedde, Sandro F. ; Lugli, Paolo ; Hayden, Oliver

  • Author_Institution
    Corp. Technol., Siemens AG, Erlangen, Germany
  • Volume
    49
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    1016
  • Lastpage
    1025
  • Abstract
    Organic photodiodes (OPDs) are attractive as solution-processed devices for sensing applications. Industrial and medical sensors often have the requirement to operate in the near-infrared (NIR) spectrum between 650 and 900 nm and are ideally visible-blind. Due to the tailored spectral sensitivity of the organic semiconductors, OPDs are attractive as filter-free solid-state alternative. In addition, the large active areas of the OPDs potentially allow fabricating lens-free light-barrier and reflective sensors. In this paper, we discuss different approaches toward NIR sensitive OPDs with a large active area up to 1 cm2 applying polymers and small molecules as light absorbers. We demonstrate that with layer stacks optimized to the solution-processed semiconductor properties photodiodes with bulk heterojunctions with a minimum external quantum efficiency peak in the NIR and a rectification ratio of ~105 can be achieved, which match industrial sensing requirements.
  • Keywords
    conducting polymers; optical polymers; organic semiconductors; photodetectors; photodiodes; rectification; bulk heterojunctions; industrial sensors; lens-free light-barrier sensors; light absorbers; medical sensors; minimum external quantum efficiency; near-infrared organic photodiodes; organic semiconductors; polymers; rectification; reflective sensors; sensing applications; solution-processed semiconductor properties; spectral sensitivity; Absorption; Dark current; Films; Plastics; Sensitivity; Sensors; Near-infrared; organic; photodiode; semiconductor; sensor;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2013.2285158
  • Filename
    6626566