Title :
Room temperature continuous-wave operation of 1.3 μm GaAsP/GaAs/GaAsSb VCSELs grown on GaAs
Author :
Johnson, S. ; Chaparro, S. ; Samal, N. ; Dowd, P. ; Yu, S.-Q. ; Wang, Jun-Bo ; Shiralagi, K. ; Zhang, Yong-Heng
Author_Institution :
Lytek Corp., Phoenix, AZ
Abstract :
Room-temperature continuous wave operation of antimonide-based long wavelength VCSELs is reported. Power outputs up to 200 muW and wavelengths up to 1290 nm are achieved, making them suitable for optical data-communications applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; optical communication equipment; semiconductor lasers; surface emitting lasers; 1.3 mum; 1290 nm; 200 muW; 293 to 298 K; GaAs; GaAsP-GaAs-GaAsSb; GaAsP/GaAs/GaAsSb VCSEL; antimonide-based VCSEL; continuous-wave operation; long wavelength VCSEL; optical data-communications; room temperature; Apertures; Distributed feedback devices; Gallium arsenide; Optical feedback; Optical modulation; Stimulated emission; Temperature; Thermal management; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
