Abstract :
Uncooled DFB lasers directly modulated at 10 Gb/s are key devices for optical communication systems operating at 10 Gb/s, such as 10 Gbit Ethernet, since their effective use in optical transceivers to reduce cost, size and power corruption. The paper describes the current status of these devices as well as our very recent results, Combining an optimised active region based on InGaAsP of strained MQW (multi quantum well) and a low parasitic internal optimised active region, we have fabricated 10 Gb directly modulated uncooled DFB lasers which work up to 100degC (chip temperature), with eye diagram perfectly open (showing extinction ratio > 5 dB), and bit error rate over 10 km without error floor
Keywords :
III-V semiconductors; error statistics; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical modulation; quantum well lasers; transceivers; 10 Gbit/s; 10 km; Ethernet; InGaAsP; bit error rate; chip temperature; direct modulation; extinction ratio; optical transceivers; uncooled laser diodes;
