Title :
Highly Reliable InGaAIAs Buried-Heterostructure Laser for 10-Gbit/s Ethernet
Author :
Sato, H. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Tsuchiya, T. ; Nakahara, K. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
Abstract :
A 1.3-mum InGaAlAs buried-heterostructure laser was fabricated and confirmed to have a stable operation at 10 mW 85degC. Its estimated lifetime in an automatic-power-control aging test is 1e5 hours
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser reliability; laser stability; life testing; optical communication equipment; optical fabrication; optical fibre LAN; semiconductor lasers; 1.3 mum; 10 Gbit/s; 1E5 hour; Ethernet; InGaAlAs; InGaAlAs buried-heterostructure laser; automatic-power-control aging test; laser reliability; lifetime; stable operation;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
