• DocumentCode
    452240
  • Title

    Highly Reliable InGaAIAs Buried-Heterostructure Laser for 10-Gbit/s Ethernet

  • Author

    Sato, H. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Tsuchiya, T. ; Nakahara, K. ; Tsuji, S.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo
  • Volume
    2
  • fYear
    2002
  • fDate
    8-12 Sept. 2002
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 1.3-mum InGaAlAs buried-heterostructure laser was fabricated and confirmed to have a stable operation at 10 mW 85degC. Its estimated lifetime in an automatic-power-control aging test is 1e5 hours
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser reliability; laser stability; life testing; optical communication equipment; optical fabrication; optical fibre LAN; semiconductor lasers; 1.3 mum; 10 Gbit/s; 1E5 hour; Ethernet; InGaAlAs; InGaAlAs buried-heterostructure laser; automatic-power-control aging test; laser reliability; lifetime; stable operation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2002. ECOC 2002. 28th European Conference on
  • Conference_Location
    Copenhagen
  • Print_ISBN
    87-90974-63-8
  • Type

    conf

  • Filename
    1601030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=452240