Title :
VCSEL and MEMS Technologies for High Speed LANs
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama
Abstract :
We present the fabrication and lasing characteristics of uncooled 1.2 mum highly strained GaInAs/GaAs surface emitting lasers. Multiple-wavelength VCSEL arrays are formed on patterned substrates, operating in a new wavelength window of 1.1-1.2 mum. Also, a MEMS technology is introduced for wavelength control of VCSELs
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; micro-optics; micromechanical devices; optical communication equipment; optical fibre LAN; semiconductor laser arrays; surface emitting lasers; 1.1 to 1.2 mum; GaInAs-GaAs; GaInAs/GaAs surface emitting laser; MEMS technology; VCSEL technology; high speed LAN; laser fabrication; local area networks; microelectromechanical systems; multiple-wavelength laser arrays; patterned substrates; uncooled laser; vertical cavity surface emitting laser; wavelength control;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
