Title :
Influence of Interface Textures on Light Management in Thin-Film Silicon Solar Cells With Intermediate Reflector
Author :
Chao Zhang ; Meier, Markus ; Hoffmann, Axel ; Wendi Zhang ; Bittkau, Karsten ; Jost, Gabrielle ; Paetzold, Ulrich W. ; Ermes, Markus ; Merdzhanova, Tsvetelina
Author_Institution :
Am Inst. fur Energie- und Klimaforschung-Photovoltaik, Forschungszentrum Julich GmbH, Julich, Germany
Abstract :
High-efficiency thin-film silicon solar cells require advanced textures at the front contacts for light management. In this contribution, the influence of the texture of various transparent conductive oxides (TCO) on the effectiveness of an intermediate reflector layer (IRL) in a-Si:H/μc-Si:H tandem solar cells is investigated. The employed front side TCOs include several types of sputter-etched ZnO:Al, LPCVD ZnO:B and APCVD SnO2:F. The topographies after different stages of the deposition process of the tandem solar cell, at the front TCO, after deposition of the amorphous top cell and after the deposition of the microcrystalline bottom cell, were characterized by atomic force microscopy at precisely the same spot. The external quantum efficiency of the fabricated solar cells were measured and successfully reproduced by a finite-difference time-domain method applying the measured topographies at each interface of the solar cell. With these simulations, the impact of structure type and feature size on the effectiveness of the IRL is investigated. The highest IRL effectiveness in a tandem solar cell was found for double-textured ZnO:Al. In this contribution, we study the interplay between interface textures and parasitic losses. Our findings are relevant for the design of topography for optimized IRL performance.
Keywords :
II-VI semiconductors; aluminium; amorphous semiconductors; atomic force microscopy; boron; elemental semiconductors; finite difference time-domain analysis; fluorine; hydrogen; plasma CVD; semiconductor thin films; silicon; solar cells; sputter etching; texture; tin compounds; wide band gap semiconductors; zinc compounds; LPCVD; Si:H-Si:H-SnO2:F; Si:H-Si:H-ZnO:Al; Si:H-Si:H-ZnO:B; atomic force microscopy; deposition process; external quantum efficiency; finite-difference time-domain method; high-efficiency thin-film silicon solar cells; interface textures; intermediate reflector layer; light management; microcrystalline bottom cell; sputter etching; topography; transparent conductive oxides; Current density; Finite difference methods; Photovoltaic cells; Silicon; Surfaces; Time-domain analysis; A-Si:H/μc-Si:H; A-Si:H/??c-Si:H; finite-difference time-domain (FDTD) simulation; intermediate reflector layer; light management; silicon tandem solar cell; transparent conductive oxides (TCO);
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2014.2364399