DocumentCode :
452528
Title :
60 Gbit/s InP-Based Monolithic Photoreceiver
Author :
Bach, H.-G. ; Beling, A. ; Mekonnen, G.G. ; Schlaak, W. ; Bornholdt, C.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH
Volume :
4
fYear :
2002
fDate :
8-12 Sept. 2002
Firstpage :
1
Lastpage :
2
Abstract :
A fully packaged InP-based photoreceiver, comprising a waveguide-integrated photodiode and a travelling wave amplifier is presented, which allows DC-coupled bias-T-free interfacing to subsequent electronics. The O/E conversion capability for NRZ modulated data rates up to 66 Gbits/s is shown
Keywords :
III-V semiconductors; indium compounds; integrated optics; optical receivers; optical waveguides; photodiodes; travelling wave amplifiers; 60 Gbits/s; DC-coupled bias-T-free interface; InP; NRZ modulated data rate; monolithic photoreceiver; optical-electrical conversion capability; travelling wave amplifier; waveguide-integrated photodiode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
Type :
conf
Filename :
1601343
Link To Document :
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