Title :
Highly Sensitive and Highly Reliable APD for 10 Gbit/s Optical Communication Systems
Author :
Tanaka, S. ; Fujisaki, S. ; Matsuoka, Y. ; Tsuchiya ; Tsuji, S. ; Ito, K. ; Toyonaka, T. ; Matsuda, H. ; Miura, And A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji-shi
Abstract :
An InAlAs-avalanche photodiodes (APDs) with gain-bandwidth (GB) product of 120 GHz suitable for 10 Gbit/s optical communication systems has been developed. With a SiGe-HBT preamplifier, the minimum sensitivity of -29.8 dBm was demonstrated
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; avalanche photodiodes; heterojunction bipolar transistors; indium compounds; optical receivers; 10 Gbit/s; 120 GHz; HBT preamplifier; InAlAs; SiGe; avalanche photodiodes; gain-bandwidth product; high-reliable APD; high-sensitive APD; optical communication systems;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
