• DocumentCode
    452531
  • Title

    High-Speed Semiconductor Electroabsorption Modulators

  • Author

    Irmscher, S. ; Lewen, R. ; Eriksson, U. ; Westergren, U. ; Thylen, L.

  • Author_Institution
    R. Inst. of Technol., Kista
  • Volume
    4
  • fYear
    2002
  • fDate
    8-12 Sept. 2002
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report recent progress in InP/InGaAsP traveling wave electroabsorption modulator substantially exceeding 45 GHz modulation bandwidth. Large-signal and small-signal measurements indicate a potential for 40 Gbit/s or higher at 1.55 mum with low drive voltage
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical fibre communication; 1.55 micron; 40 Gbit/s; InP-InGaAsP; fiber optics communication systems; high-speed semiconductor electroabsorption modulators; large-signal measurements; small-signal measurements; traveling wave modulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2002. ECOC 2002. 28th European Conference on
  • Conference_Location
    Copenhagen
  • Print_ISBN
    87-90974-63-8
  • Type

    conf

  • Filename
    1601346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=452531