Title :
High-Speed Semiconductor Electroabsorption Modulators
Author :
Irmscher, S. ; Lewen, R. ; Eriksson, U. ; Westergren, U. ; Thylen, L.
Author_Institution :
R. Inst. of Technol., Kista
Abstract :
We report recent progress in InP/InGaAsP traveling wave electroabsorption modulator substantially exceeding 45 GHz modulation bandwidth. Large-signal and small-signal measurements indicate a potential for 40 Gbit/s or higher at 1.55 mum with low drive voltage
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical fibre communication; 1.55 micron; 40 Gbit/s; InP-InGaAsP; fiber optics communication systems; high-speed semiconductor electroabsorption modulators; large-signal measurements; small-signal measurements; traveling wave modulator;
Conference_Titel :
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location :
Copenhagen
Print_ISBN :
87-90974-63-8
