Title :
Highly miniaturized on-chip passive components fabricated by microstrip lines with periodically perforated ground metal on GaAs MMIC
Author :
Yun, Young ; Lee, Kyung-Sik
Author_Institution :
Dept. of Radio Sci. & Eng., Korea Maritime Univ., Busan, South Korea
Abstract :
In this work, using the novel microstrip line structure with PPGM (periodically perforated ground metal), highly miniaturized and low impedance on-chip passive components were realized on GaAs MMIC. The size of highly miniaturized branch-line coupler with a low port impedance of 24 Ω was 0.25 mm2 on GaAs MMIC, which was 10% of the one fabricated by conventional microstrip line. The branch-line coupler exhibited good RF performances from 20 to 30 GHz. In addition, in this work, highly miniaturized on-chip filter and impedance transformer were also realized using the microstrip line structure with PPGM, and they exhibited good RF performances in Ku-Ka band. The length of the open stub filter was reduced to 39% of the one fabricated by conventional microstrip line, and the size of impedance transformer was about 1% of the one fabricated by conventional microstrip line. According to the theoretical analysis, the passband of the microstrip line with PPGM was estimated to reach up to 600 GHz.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microstrip filters; microstrip lines; microwave filters; passive networks; waveguide couplers; 20 to 30 GHz; 24 ohm; GaAs; Ku-Ka band; MMIC circuit; branch-line coupler; impedance transformer; microstrip lines; on-chip passive components; periodical perforated ground metal; radiofrequency performance; Band pass filters; Capacitance; Coupling circuits; FETs; Gallium arsenide; Impedance; MMICs; Microstrip components; Microstrip filters; Radio frequency;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606299