Title :
An improved method of microwave power MESFET modeling
Author :
Yifan, Gao ; Cong, Gu
Author_Institution :
Chang´´an Univ., Xi´´an, China
Abstract :
An improved method of extracting the modeling parameters, small-signal equivalent circuit parameters, is proposed in this paper, including the approaches of determining all elements´ sensitivities to the sum of error functions, optimization sequence and direction of objective functions with eigenvalues and eigenvectors of Hessian matrix, and approach of damping algorithm. The agreement is good between the calculated values and the measurement ones of MESFET.
Keywords :
Hessian matrices; eigenvalues and eigenfunctions; equivalent circuits; microwave field effect transistors; power MESFET; semiconductor device models; Hessian matrix; damping algorithm; equivalent circuit parameters; error functions; microwave power MESFET modeling; modeling parameters extraction; optimization sequence; Damping; Databases; Eigenvalues and eigenfunctions; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Microwave theory and techniques; Optimization methods; Scattering parameters;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606323
