Numerical modeling for planar spiral inductors in silicon-based radio-frequency integrated circuits

Author

Zheng, Hong-Xing

Author_Institution

Dept. of Electron. Eng., Tianjin Univ. of Technol. & Educ., China

Volume

1

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A numerical method to analyze the transient characteristics of planar spiral inductors (PSI) in silicon-based is presented. Applying a locally conformed technique and an alternating-direction implicit (ADI) scheme to the finite-difference time-domain (FDTD) method, the numerical model of the PSI has been developed and an efficient computation is implemented. An equivalent circuit, which includes frequency-independent circuit elements, is also introduced. Various parameters of the PSI structures have been analyzed. The results illustrate that a high degree of accuracy can be obtained by using proposed method.

Keywords

equivalent circuits; finite difference time-domain analysis; inductors; integrated circuit modelling; radiofrequency integrated circuits; silicon; ADI scheme; FDTD method; PSI structures; Si; alternating-direction implicit scheme; equivalent circuit; finite-difference time-domain method; frequency-independent circuit elements; locally conformed technique; planar spiral inductors; radio-frequency integrated circuits; Equivalent circuits; Finite difference methods; Frequency; Inductors; Integrated circuit modeling; Numerical models; Radiofrequency integrated circuits; Spirals; Time domain analysis; Transient analysis; Conformal ADI-FDTD; frequency-independent equivalent circuit; planar spiral inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606325

Filename

1606325