• DocumentCode
    453085
  • Title

    0.25μm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with an fT of 115GHz

  • Author

    Liu, Dongmin ; Hudait, Mantu ; Lin, Yong ; Kim, Hyeongnam ; Ringel, Steven A. ; Lu, Wu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • Volume
    2
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    In this paper we report growth, fabrication and characterization of In0.52Al0.4sAs/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with a gate length of 0.25 μm. In comparison with InAlAs/InGaAs/InP composite channel HEMTs, these devices have better band structure for transferring electrons to the composite channel under high electric field, thus exhibit excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, an fT of 115 GHz, and an fmax of 137 GHz. To our knowledge, this is the first report of InAlAs/InGaAs/InAsP composite channel HEMTs. The fT is the highest ever reported for any composite channel HEMTs with the same gate length.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; 0.25 micron; 115 GHz; 137 GHz; In0.52Al0.48As-In0.53Ga0.47As-InAs0.3P0.7; InAlAs-InGaAs-InP; band structure; composite channel HEMT; high electric fields; Contact resistance; Etching; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave measurements; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1606394
  • Filename
    1606394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453085