DocumentCode :
453085
Title :
0.25μm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with an fT of 115GHz
Author :
Liu, Dongmin ; Hudait, Mantu ; Lin, Yong ; Kim, Hyeongnam ; Ringel, Steven A. ; Lu, Wu
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume :
2
fYear :
2005
fDate :
4-7 Dec. 2005
Abstract :
In this paper we report growth, fabrication and characterization of In0.52Al0.4sAs/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with a gate length of 0.25 μm. In comparison with InAlAs/InGaAs/InP composite channel HEMTs, these devices have better band structure for transferring electrons to the composite channel under high electric field, thus exhibit excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, an fT of 115 GHz, and an fmax of 137 GHz. To our knowledge, this is the first report of InAlAs/InGaAs/InAsP composite channel HEMTs. The fT is the highest ever reported for any composite channel HEMTs with the same gate length.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; 0.25 micron; 115 GHz; 137 GHz; In0.52Al0.48As-In0.53Ga0.47As-InAs0.3P0.7; InAlAs-InGaAs-InP; band structure; composite channel HEMT; high electric fields; Contact resistance; Etching; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave measurements; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
Type :
conf
DOI :
10.1109/APMC.2005.1606394
Filename :
1606394
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=453085
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