Title :
A physics-based transit time model for GaInP/GaAs HBT devices
Author :
Tseng, Sheng-Che ; Meng, Chinchun ; Chen, Wei-Yu ; Su, Jen-Yi
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (IC, VCE) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (IC, VCE) more precisely. This model has obvious advantage over the VBIC model to show the relation between the ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; transit time devices; GaInP-GaAs; HBT devices; HICUM model; VBIC model; heterojunction bipolar devices; minority charge; physics-based transit time model; transit time frequency; Circuit simulation; Current measurement; Curve fitting; Electron mobility; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Radiofrequency integrated circuits; Time frequency analysis; Time measurement; GaInP/GaAs HBT; HICUM and VBIC; Minority Charge; Transit Time;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606449
