DocumentCode
453118
Title
Effects of hot carrier stress and oxide breakdown on RF characteristics of MOSFETs
Author
Chen, Kun-Ming ; Yang, Dao-Yen ; Huang, Sheng-Yi ; Huang, Guo-Wei ; Chang, Li-Hsin ; Liang, Victor ; Tseng, Hua-Chou ; Chang, Chun-Yen
Author_Institution
National Nano Device Labs., Taiwan, China
Volume
2
fYear
2005
fDate
4-7 Dec. 2005
Abstract
Effects of hot carrier stress and oxide breakdown on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that the degradations of cutoff frequency and power performance after hot carrier stress are larger than that after oxide breakdown. However, the minimum noise figure degradation is more significant after oxide breakdown. Those observations are important and should be concerned when designing an RF front-end circuit.
Keywords
MOSFET; hot carriers; semiconductor device breakdown; semiconductor device models; RF MOSFET; RF front-end circuit; cutoff frequency degradation; hot carrier stress; noise figure degradation; oxide breakdown; power performance degradation; Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Hot carriers; MOSFETs; Noise figure; Radio frequency; Semiconductor device noise; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN
0-7803-9433-X
Type
conf
DOI
10.1109/APMC.2005.1606451
Filename
1606451
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