Temperature dependence of rise time for TF SOI CMOS inverter with EM NMOSFET and AM PMOSFET assembly operating at 27-300 °C

In this paper temperature dependence of rise time of SOI CMOS inverter with EM NMOSFET and AM PMOSFET assembly is modeled approximately in electronics in the high temperature range (27-300°C) in details. Moreover, experiments on the inverter were done at 27°C, 100°C, 150°C, 200°C, 250°C, and 300°C respectively and the measured results are illustrated and discussed simply. It indicates that the inverter is very suitable for high temperature applications up to 300°C and its rise time varies only slightly with temperature. If optimization is introduced during its design process and advanced technologies are adopted, more abrupt rise-up characteristic may be realized and it might be used in higher frequencies such as RF or microwave frequencies.