DocumentCode :
453127
Title :
An analysis of base current effect on the anomalous dip of scattering parameter S12 in SiGe HBTs
Author :
Chen, Han-Yu ; Chen, Kun-Ming ; Huang, Guo-Wei ; Chang, Chun-Yen
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
2
fYear :
2005
fDate :
4-7 Dec. 2005
Abstract :
In this paper, the anomalous dip in scattering parameters S12 of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (VCE), an increase of base current (which corresponds to an increase of base-emitter capacitance (Cπ) enhances the anomalous dip.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; microwave bipolar transistors; S-parameters; SiGe; anomalous dip; base current effect; constant collector-emitter voltage; heterojunction bipolar transistor; scattering parameter; Electronics packaging; Feedback circuits; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; Microwave devices; Microwave transistors; Scattering parameters; Silicon germanium; Voltage; Anomalous dip; S-parameters; SiGe; base current; heterojunction bipolar transistor (HBT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
Type :
conf
DOI :
10.1109/APMC.2005.1606462
Filename :
1606462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=453127
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