Title :
The research based on the design of a 1.3GHz cascode LNA
Author :
Hongbo, Ma ; Quanyuan, Feng ; Kunlin, Gong
Author_Institution :
Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China
Abstract :
A 1.3GHz cascode low noise amplifier based on 0.25μm CMOS technology has been successfully designed in this paper. From the aspect of noise optimization, gain and impedance match, the design methodology for LNA is analyzed in detail, the influence of capacitance Cgd, C_match_in, and W2 on LNA is also discussed, whose noise factor and S-parameter is simulated and tested by the ADS software. The result has argued that the good NF of 1.42dB, moderate gain of 13.687dB, acceptable S11 of -14.769dB, S22 of -14.530dB, S12 of -52.955dB are achieved under the frequency of 1.3GHz.
Keywords :
CMOS integrated circuits; S-parameters; UHF amplifiers; capacitance; low noise amplifiers; 0.25 micron; 1.3 GHz; 1.42 dB; 13.687 dB; CMOS technology; S-parameter; cascode LNA; gain; impedance match; low noise amplifier; noise factor; noise optimization; Analytical models; CMOS technology; Capacitance; Design methodology; Design optimization; Impedance; Low-noise amplifiers; Noise measurement; Scattering parameters; Software testing;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606469