Modeling of nonlinear power amplifier with memory effects applied for 3G system

Author

Peng, Chong ; Jiang, Wei ; Ni, Yan ; Wang, Jingqi ; Yu, Xuan ; Xing, Bo ; Zhu, Xiaowei

Author_Institution

State Key Lab. of Millimeter Wave, Southeast Univ., Nanjing, China

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

In this paper, the nonlinear modeling of power amplifier with remarkable memory effects is presented. The power amplifier was designed by using LDMOS, and was driven by one-carrier W-CDMA signal and four-carrier W-CDMA signal respectively. Two different models, V-vector Volterra model and MPMSD model, are extracted from the power amplifier and the performances on capturing memory effects of the power amplifier are compared. The simulation results show that the MPMSD model is more accurate and effective than the V-vector Volterra model.

Keywords

3G mobile communication; MOS integrated circuits; Volterra series; code division multiple access; nonlinear network analysis; power amplifiers; 3G system; LDMOS; V-vector Volterra model; W-CDMA signal; behavioral model; memory effects; nonlinear power amplifier modeling; Finite impulse response filter; Intermodulation distortion; Laboratories; Multiaccess communication; Nonlinear distortion; Polynomials; Power amplifiers; Power system modeling; Radio frequency; Radiofrequency amplifiers; Behavioral Model; Memory Effect; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606483

Filename

1606483