Title :
12-channel, 30Gb/s monolithic integrated front-end amplifier for parallel optical communication
Author :
Zhaofeng, Xue ; Zhiqun, Li ; Zhigong, Wang
Author_Institution :
Inst. of RF- & OE - ICs, Southeast Univ., Nanjing, China
Abstract :
A 12-channel, 30Gb/s monolithic integrated front-end amplifier for parallel optical communication application is presented in this paper. The chip was designed and fabricated in 0.18-μm CMOS technology. The capacitance of photodiode is 2pF, each channel is designed to work at 2.5Gb/s and contains a trans-impedance amplifier (TIA) and a limiting amplifier (LA). With the power supply of 1.8V, each channel consumes 85mW, and provides 578 mV differential outputs. Total power consumption of 12 channels is about 1.02W. Details of the chip design, layout and measured results are described below.
Keywords :
CMOS integrated circuits; amplifiers; limiters; optical communication equipment; photodiodes; 0.18 micron; 2 pF; 2.5 Gbit/s; 30 Gbit/s; 578 mV; 85 mW; CMOS technology; chip design; differential outputs; limiting amplifier; monolithic integrated front-end amplifier; parallel optical communication; photodiode; power consumption; trans-impedance amplifier; CMOS technology; Capacitance; Chip scale packaging; Energy consumption; Optical amplifiers; Optical fiber communication; Photodiodes; Power supplies; Semiconductor device measurement; Semiconductor optical amplifiers; coupling Noise; deep-n-well; front-end amplifier; guard-ring; regulated-cascode;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606495
