Title :
Design of an MMIC broadband mixer with high output power using InGaP/GaAs HBT technology
Author :
Lee, Young-Ho ; Lee, Sang-Hun ; Lee, Jeiyoung ; Park, Deok-Soo ; Cheon, Sang-Hoon ; Shrestha, Bhanu ; Kim, Sun-Jin ; Kennedy, Gary P. ; Kim, Nam-Young
Author_Institution :
RFIC Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, an InGaP/GaAs HBT MMIC broadband mixer with high output power is designed within a total chip area of 2.3 × 0.85 mm2. The down-conversion mixer shows return loss of 20 dB and a conversion gain of -2.7 dB in the broadband frequency range of 400 MHz to 10 GHz. It also shows a third-order input intercept point (IIP3) of +22.5 dBm, a third-order output intercept point (OIP3) of +19.8 dBm, and an output-referred 1-dB compression point (P1dB,out) of +10 dBm.
Keywords :
III-V semiconductors; MMIC mixers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; -2.7 dB; 0.4 to 10 GHz; InGaP-GaAs; InGaP/GaAs HBT technology; MMIC mixer; broadband frequency range; broadband mixer; conversion gain; down-conversion mixer; heterojunction bipolar transistor; high output power; return loss; third-order input intercept point; third-order output intercept point; Broadband amplifiers; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Mixers; Power amplifiers; Power generation; Radio frequency; Radiofrequency integrated circuits; Broadband Mixer; Heterojunction Bipolar Transistor (HBT); High Output Power;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606497
