A 100-120 GHz quadruple-LO pumped harmonic diode mixer using standard GaAs based 0.15-μm PHEMT process

Author

Lei, Ming-Fong ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A 100-120 GHz 4× sub-harmonically pumped diode mixer using standard 0.15-μm PHEMT process on 4-mil GaAs substrate is presented. Fourth order mixing was performed using an anti-parallel diode pair. Filters and harmonic stubs are implemented using grounded coplanar waveguide structure. The average conversion loss is 27 dB from 100 to 120 GHz, in a compact chip size of 1.0 × 1.0 mm².

Keywords

HEMT circuits; III-V semiconductors; Schottky diode mixers; coplanar waveguides; gallium arsenide; millimetre wave diodes; millimetre wave filters; millimetre wave mixers; millimetre wave oscillators; 0.15 micron; 100 to 120 GHz; PHEMT process; Schottky diodes; anti-parallel diode; average conversion loss; filters; fourth order mixing; grounded coplanar waveguide structure; harmonic diode mixer; harmonic stubs; millimeter-wave mixer; quadruple-LO pumped mixer; sub-harmonically pumped diode mixer; Circuits; Coplanar waveguides; Extraterrestrial measurements; Gallium arsenide; Mixers; PHEMTs; Power harmonic filters; Schottky diodes; Semiconductor device measurement; Semiconductor diodes; Schottky diodes; coplanar waveguide (CPW); millimeter-wave; sub-harmonically pumped mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606506

Filename

1606506