DocumentCode
453155
Title
Design of 0.1∼14 GHz fully-integrated tapered distributed amplifiers in 0.25μm CMOS
Author
Chen, Xu ; Wang, Zhigong
Author_Institution
Southeast Univ., Nanjing, China
Volume
2
fYear
2005
fDate
4-7 Dec. 2005
Abstract
This paper presents the design techniques of an integrated distributed amplifier. A varying impedance circuit technique is adopted and a standard 0.25μm CMOS process is utilized. The optimized amplifier has a chip area of 1.5×0.8 mm2 and a power dissipation of 82.5mW under a single 2.5V supply. It can achieve 10dB gain in a frequency range from 0.1 GHz to 14 GHz.
Keywords
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; distributed amplifiers; impedance matching; integrated circuit design; microwave amplifiers; microwave integrated circuits; 0.1 to 14 GHz; 0.25 micron; 10 dB; 2.5 V; 82.5 mW; CMOS process; chip area; distributed amplifier design; impedance circuit technique; power dissipation; CMOS process; Costs; Distributed amplifiers; Distributed parameter circuits; FETs; Gain; Impedance; Power transmission lines; Transmission line theory; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN
0-7803-9433-X
Type
conf
DOI
10.1109/APMC.2005.1606507
Filename
1606507
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